Demonstrates chirality switching in Mn₃Sn using field-like torque, suggesting potential for advanced memory technologies.
Spin-orbit torque (SOT) enables efficient magnetic moment control through current-induced torques, playing a critical role in spin chirality switching for non-collinear antiferromagnetic (AFM) materials. However, achieving stable chirality switching remains challenging, with the roles of the two SOT components field-like torque (FLT) and damping-like torque (DLT) remaining unclear. Here, we demonstrate deterministic 180°chirality switching in monolayer Mn₃Sn by introducing Néel spin currents perpendicular to the initial atomic magnetic moments to break the symmetry. In particular, by increasing the FLT component, the critical switching current density and the switching time can be effectively reduced. We also provide diagrams of the switching process of sublattices with different coefficients of FLT and DLT. Our research results contribute to a further understanding of the switching mechanism of AFM materials and the development of an ultrafast AFM-based magnetic random access memory (MRAM).
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Hai et al. (2025) studied this question.
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