AI-driven optical scatterometry improves metrology accuracy for high aspect ratio features in semiconductor structures, suggesting practical applications in packaging.
This article introduces an AI-driven optical scatterometry method with global sensitivity analysis (GSA) for OCD metrology in semiconductor sub-micron structures. It addresses challenges in measuring sub-micron high aspect ratio (HAR) features by integrating variance-based global sensitivity analysis (GSA) with deep ultraviolet (DUV) and short-wave infrared (SWIR) scatterometry, achieving less than 3% errors compared to AFM and SEM, and proving reliable for HAR metrology.
No takes yet. Share an insight, caveat, or question.
Chen et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: