Conference presentation demonstrates improved critical dimension accuracy in HAR microstructures, highlighting scatterometry and sensitivity analysis.
Advances in 3D integrated circuits (3DIC) and Chip-on-Wafer-on-Substrate (CoWoS) packaging require accurate metrology of high aspect ratio (HAR) microstructures, which challenges traditional inline methods. We introduce a hybrid visible-to-shortwave infrared (SWIR) spectroscopic scatterometry system that integrates back focal plane (BFP) scatterometry with spectroscopic reflectometry. Using a low numerical aperture (NA) normal incidence setup and angle-scanning module, the system enhances depth sensitivity and lateral critical dimension (CD) accuracy. The SWIR range improves bottom CD and sidewall angle detection. Global sensitivity analysis (GSA) guides design, while BFP imaging aids lateral CD extraction. Experimental results show CD errors below 1.95%, validating the system's precision for HAR metrology.
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Kuo et al. (2025) studied this question.
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