Characterization of large ferroelectric polarization and high-T C in sol-gel deposited PbTiO₃-based perovskite thin films

Bi Me O 3 -PbTiO 3 (where Me represents transition metals) perovskite-type thin films have been widely studied due to their superior ferroelectric properties, including robust ferroelectric polarization and high Curie temperatures. In this study, PbTiO 3 -based perovskite thin films of x Bi(Cu 1/2 Zr 1/2 ) O 3 -(1- x ) PbTiO 3 ( x BCZ-(1- x ) PT) were designed and prepared on Pt(111)/Ti/SiO 2 /Si substrates using the conventional sol-gel method. The x BCZ-(1- x ) PT thin films demonstrate remarkable crystallinity, characterized by a perovskite structure and a dense microstructure, which contribute to their high-performance ferroelectric and fatigue properties. Notably, the thin films exhibit large remnant polarization (2 P r ) values, reaching 98 and 74 μ C cm -2 for the 0.05BCZ-0.95PT and 0.1BCZ-0.9PT compositions, respectively. Furthermore, the thin films also demonstrate a high Curie temperature ( T C = 510℃), as well as favorable fatigue properties and low leakage current, suggesting their potential applicability in ferroelectric devices.