Perspectives on GaN/SiC hybrid power transistors: A review on heteroepitaxial growth, processing, and device operation

The monolithic integration of GaN/SiC hybrid power devices offers a transformative approach to simultaneously harnessing the complementary advantages of the two most widely used wide-bandgap (WBG) semiconductors: GaN and SiC. This article systematically presents the recent advancements in the growth of monolithic GaN and 4H-SiC heteroepitaxial structures and hybrid power devices based on these heteroepitaxial structures. The compatible epitaxial technologies for growing GaN and SiC on 4H-SiC with 4° off-cut and 0.5° off-cut angles are discussed, including the respective challenges, mechanisms, and recent advancements. Key process challenges encountered during the fabrication of GaN/SiC hybrid power devices are also addressed. In addition, this article showcases the design and experimental demonstration of two types of GaN/SiC hybrid power devices, GaN/SiC HyFET and GaN/SiC-based hyHEMT. Based on this, the trap-associated breakdown characteristics of the HyFET are further elucidated in this article, offering guidance for the future design of GaN/SiC hybrid power devices.