New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT

This work explores the application of gallium nitride (GaN)-based solid-state devices for high-power, high-frequency, and high-temperature technologies. It presents an in-depth study of GaN on semi-insulating SiC substrates. The study demonstrates, through bow range investigation, optical microscopy, and X-ray diffraction (XRD), that by adapting growth parameters from those used for Si substrates to those suitable for SiC substrates, it is possible to achieve high-quality crystalline MOCVD growth both under on-axis and 4°off-axis substrate orientations.