What question did this study set out to answer?

To assess and compare the high-frequency electrical performance, microwave power output, and thermal characteristics of AlGaN/GaN HEMTs fabricated on diamond versus SiC substrates.

November 1, 2007IEEE Electron Device Letters

Comparison of GaN HEMTs on Diamond and SiC Substrates

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To assess and compare the high-frequency electrical performance, microwave power output, and thermal characteristics of AlGaN/GaN HEMTs fabricated on diamond versus SiC substrates.
Fabricated AlGaN/GaN HEMTs on diamond substrates with a gate periphery (WG) of 250 µm.
Characterized cutoff frequency, measured X-band RF power density at 10 GHz, and recorded operational temperature rises alongside equivalent devices on SiC substrates.
GaN-on-diamond transistors achieved a cutoff frequency (ft) of 27.4 GHz.
Devices attained an X-band output power density of 2.79 W/mm at 10 GHz.
Provided comparative operational temperature rise data between diamond- and SiC-based transistor architectures.

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Implication

Experimental study demonstrates high-frequency operation and thermal metrics of GaN-on-diamond versus SiC HEMTs, highlighting diamond's potential for high-power radio-frequency applications.

Cite This Study

Felbinger et al. (2007) studied this question.

synapsesocial.com/papers/6a9406c33c3b3bc8ec6d1d9b https://doi.org/10.1109/led.2007.908490

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Implication

Experimental study demonstrates high-frequency operation and thermal metrics of GaN-on-diamond versus SiC HEMTs, highlighting diamond's potential for high-power radio-frequency applications.

Comparison of GaN HEMTs on Diamond and SiC Substrates

Key Points

Discussion

Implication

Cite This Study

Comparison of GaN HEMTs on Diamond and SiC Substrates

Key Points

Discussion

Implication

Cite This Study

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