The current transport mechanism of the multi-channel AlGaN/GaN high electron mobility transistors

This study introduces the current transport mechanism in electron mobility transistors (HEMTs), focusing specifically on the operating state and current transfer process of multi two-dimensional electron gas (2DEG) channels. In comparison to single-channel HEMT, this multi-channel HEMT increases the current density by over six times, offering significant potential for devices in the high-power domain. It further presents an equivalent circuit model. This model corresponds closely to the proposed multi-channel structure and has been thoroughly validated. This study provides an explanation of the current transfer mechanism within the multi channels, paving a way for advancements in high-power device applications.