This paper presents a comprehensive analysis of the impact of gate dielectric and thickness on the performance of double-channel(DC) AlGaN/GaN High Electron Mo-bility Transistors (HEMT). The investigation encompasses a thorough examination of key electrical characteristics including 1- V characteristic, transfer characteristic, channel resistance and field-effect mobility. Experimental results highlight distinct elec-trical responses based on different gate dielectric materials and thicknesses. This study provides valuable insights for optimizing double-channel AlGaN/GaN device design, offering guidelines for enhanced performance and high power applications in advanced electronics.
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Adnan et al. (2024) studied this question.
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