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December 4, 2025Applied SciencesOpen Access

Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers

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Authors

MAMohamed Taha AmenDTDuy Phu TranUniversity of South AustraliaAFAsad Feroze

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Overview

Experimental investigation shows transconductance varies with barrier thickness in AlGaN/GaN HEMTs, suggesting design improvements for sensors.

Key Points

  • Transconductance increases with decreasing barrier thickness for shorter channel lengths, highlighting device optimization.
  • Subthreshold swing values are lower with thinner barriers, indicating tighter control in AlGaN/GaN HEMTs.
  • Experimental investigation reveals critical performance relationships not fully explored in previous simulation studies.
  • Findings may inform the design of optimized sensors tailored for various applications.

Cite This Study

Amen et al. (2025) studied this question.

synapsesocial.com/papers/6930e8d7ea1aef094cca39e1https://doi.org/10.3390/app152312751
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