Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 4, 2024Engineering Research ExpressOpen Access

Exploring the Impact of AlGaN Barrier Thickness and Temperature on Normally-ON GaN HEMT Performance

View Full Paper
Ask AI
Bookmark
Share

Authors

WHWagma HidayatMUMuhammad Usman

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Hidayat et al. (2024) studied this question.

synapsesocial.com/papers/68e70695b6db643587680b8ahttps://doi.org/10.1088/2631-8695/ad3acb
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors2026
  2. 2Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs2026 · 1 citations
  3. 3Temperature-Dependent DC Characteristics of GaN/InAlN/GaN HEMTs: GaN Cap Layer Thickness and Doping Effects2026
  4. 4Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers2025
  5. 5Impact of a thin AlN buffer layer on the characteristics of GaN high electron mobility transistors on a silicon substrate2025 · 4 citations