Research Progress on the Application of Cerium Oxide and Titanium Oxide Abrasives Modification in Chemical Mechanical Polishing

In chemical mechanical polishing (CMP), abrasives are the primary factors determining polishing performance. To achieve high-precision polishing results with a controlled material removal rate (MRR) and minimized surface defects, increasingly stringent demands are placed on abrasive characteristics, including particle size, hardness, morphology, and chemical stability. As a result, the research and development of modified abrasives have become critical for enhancing polishing performance. This paper systematically summarizes the progress of research in abrasive modification over recent years to improve polishing results, focusing on the mechanisms of action and polishing performance of CeO2 and TiO2 abrasives. It is concluded that modified CeO2 abrasives (such as core-shell structured abrasives, rare earth element-doped abrasives, and mixed abrasives) exhibit excellent polishing effects by improving their original physicochemical properties or integrating with the properties of other abrasives. Furthermore, in photocatalysis-assisted chemical mechanical polishing (PCMP), modified TiO2 abrasives generally generate highly oxidizing hydroxyl radicals (·OH), which exhibit advantages for the processing difficulty of third-generation semiconductors SiC and GaN. Looking ahead, research on modified abrasives will remain a top priority. The continuous optimization of abrasive properties is expected to lead to a more efficient and environmentally friendly semiconductor manufacturing process.