Sb-segregated GaInNAs/GaAs(Sb) triple quantum well core–multishell nanowires grown by molecular beam epitaxy

The effects of Sb incorporation on the molecular beam epitaxial growth of GaInNAs triple quantum well (QW) core–multishell nanowires on Si(111) substrates were investigated. Sb was not directly incorporated into the QWs but was predominantly localized at the interface between the QWs and the adjacent GaAs(Sb) barrier, indicating significant Sb segregation with the concentration reaching approximately 1%, which was independently confirmed by optical measurements. Room-temperature photoluminescence measurements reveal a significant red shift of the QW emission peak from 1100 nm in Sb-free nanowires to 1250 nm in the Sb-containing structures. These findings suggest that Sb acts as an efficient surfactant.