We demonstrate a new generation of composition-tuned, ternary GaAsSb nanowire lasers on silicon with emission wavelengths tuned to below the Si bandgap. By solving previous limitations in the growth of III-As-Sb based nanowires, resonator cavities with extended lengths > 7 µm and high Sb-content (~30%) are realized as a base for bulk-type or quantum-well based nanowire lasers. Bulk GaAsSb nanowire lasers with high radiative efficiency and low threshold are enabled by use of lattice-matched InAlGaAs surface passivation layers. Coaxial InGaAs multi-quantum well (MQW) active regions grown on GaAsSb nanowire templates open further scope of tailoring material gain and lasing wavelength.
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Schmiedeke et al. (2024) studied this question.
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