This research demonstrates high-performance cw-lasing at ~2.4-2.7µm in InAs nanowires, indicating significant advancements in gain optimization.
We report on the mid-infrared continuous wave (cw) lasing of InAs nanowires (NW) grown on Si by optimizing NW geometry via threshold gain calculations and selective area epitaxial approaches. NWs with diameters above 700nm show cw-lasing at ~2.4-2.7µm for a large range of cavity lengths (10-30µm) and temperatures with threshold as low as 1.4kW/cm 2 .
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Meder et al. (2025) studied this question.
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