Continuous-wave lasing from InAs nanowires at mid-infrared wavelengths

Continuous-wave (cw) operation of integrated nanoscale lasers is a key ingredient for on-chip optical processing schemes in Si photonic circuits. Here, we demonstrate cw-lasing from individual InAs nanowires at mid-infrared wavelengths (2.4-2.7 µm) without any external cavity for mode confinement. Using finite difference time domain (FDTD) modelling of the threshold gain, optimal single Fabry-Perot nanowire laser geometries with diameter > 800 nm and lengths of 10-30 µm are realized by site-selective growth methods. Corresponding nanowires exhibit cw-lasing with thresholds around 10-30 kW/cm2 at lasing emission up to 70K.