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PEALD deposits silicon oxide thin films, suggesting robust alternatives to conventional passivation layers in oxide TFTs.
Silicon oxide were deposited on the 6th generation glass by plasma‐enhanced atomic layer deposition (PEALD). PEALD process proved to be an effective method to deposit robust thin films, suggesting its potential as a replacement for conventional passivation layers in high mobility oxide TFT process.
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Lee et al. (2025) studied this question.
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