We reported the fabrication of indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) by plasma‐enhanced atomic‐layer‐deposition (PEALD) process using different surface reactivities of the precursor‐substrate combinations with controlled deposition sequences. In‐Zn‐Ga (Case II) exhibited favorable subthreshold swing (SS) values of 313 mV/decade, and moderate mobility (µFE) of 29.3 cm 2 /Vs compared to In‐Ga‐Zn (Case I) (84 mV/decade and 33.4 cm 2 /Vs).
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Yoon et al. (2024) studied this question.
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