This research demonstrates low leakage current in OLED panel TFTs, suggesting improved performance due to reduced grain boundary defects.
A few Femto‐amperes off leakage current was confirmed with Low Temperature Poly‐Silicon TFTs in OLED Panels by TFT aging method. Since its use in flat panel displays, LTPS TFTs have not been considered to have low off leakage below pico‐amperes because of the grain boundaries defects known as the origin. However, in this paper, it was confirmed that ELA LTPS TFTs can have the value of a few fA, which is the lower leakage current than Single Crystalline Si device [1].
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Lee et al. (2025) studied this question.
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