Observational analysis reveals enhanced mobility and Rashba splitting in a spin-polarized 2DEG, suggesting potential for low-power devices.
The two-dimensional electron gas (2DEG) formed at the interface between two oxide insulators provides new opportunities for electronics and spintronics. The broken inversion symmetry at the heterointerface results in Rashba spin-orbit coupling (RSOC) effect that enables the conversion between spin and charge currents. However, conducting oxide interfaces that simultaneously exhibit strong RSOC and high carrier mobility, a combination query for achieving high spin-to-charge inter-conversion efficiencies, remain scarce. Herein, we report a correlated 2DEG with giant Rashba splitting and high electron mobility in (111)-orientated EuTiO 3 /KTaO 3 (ETO/KTO) heterostructures under light illumination. Upon light modulation, a unique carrier-dependent giant anomalous Hall effect, the signature of spin-polarized 2DEG, emerges with a sign crossover at a carrier density of approximately 5.0×10 13 cm -2 , highlighting dramatic changes in the band topology of KTO(111) interface. Furthermore, at 2 K, the carrier mobility is enhanced from 10 3 cm 2 ·V -1 ·s -1 to 1800 cm 2 ·V -1 ·s -1 , a remarkable enhancement of approximately 20 times. Accompanying with a giant Rashba coefficient α R up to 360 meV·Å, this high mobility ferromagnetic 5d oxide 2DEG is predicted to achieve a giant spin-to-charge conversion efficiency of λ ~ 10 nm, showing great potential for designing low-power spin-orbitronic devices.
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Zhao et al. (2025) studied this question.
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