This perspective article discusses the impact of spin-orbit coupling on spintronic devices, suggesting improved energy efficiency through oxide/oxide interfaces.
This perspective article explores the potential of two-dimensional electron gases (2DEGs) and hole gases (2DHGs) at oxide/oxide interfaces as promising conduction channels in energy-efficient spintronic devices for memory and logic applications. Magneto-electric (ME) and ferro-electric (FE) device architectures are considered, highlighting their advantages in integrating non-volatility with ultra-fast switching capabilities. We emphasize the significance of spin-orbit coupling (SOC) in generating robust spin currents and examine how the Rashba and inverse Edelstein effects can be harnessed in device operations. Specific heterostructures, including HfO₂/SrTiO₃, Cr₂O₃/TiO₂₋ₓ, and ZrO₂₋ₓ-based systems, are reviewed in terms of their material properties, interface stability, and suitability for practical implementation. .
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Mahmood et al. (2025) studied this question.
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