Experimental Insights into Impurity Incorporation in Chemical Vapor Deposition Doped Diamond

Diamond's exceptional properties as a wide bandgap semiconductor make it a leading candidate for next‐generation power electronics and quantum technologies. However, achieving precise control over the incorporation of active dopants, such as boron, phosphorus, and nitrogen, remains a key challenge in the fabrication of diamond‐based devices. Herein, over 100 literature sources are reviewed and analyzed to evaluate and compare dopant incorporation efficiency in single‐crystal diamond synthesized via chemical vapor deposition. It also incorporates some data from polycrystalline layers for broader comparison. Specifically, the influence of dopant precursor concentration in the plasma and substrate orientation is investigated. The findings offer new insights and provide a useful reference metric for optimizing doped diamond synthesis.