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September 5, 2025Advanced Functional Materials

Scaling Effects on Ferroelectric Polarization Switching and Activation Electric Field in Epitaxial Hf0.5Zr0.5O₂ Nanodots

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Domain wall velocity reaches up to 2.3 m s−1 in a 10 nm thick Hf0.5Zr0.5O2 thin film, indicating enhanced responsiveness.
Activation electric fields increase with decreasing thickness and diameter, reaching 6.65 MV cm−1 in the thinnest structure, highlighting scaling effects.
Assessment using time-resolved piezoresponse force microscopy reveals critical insights into electrostatic boundary effects affecting ferroelectric properties.
These findings support the development of higher density, energy-efficient memory and logic devices by outlining ferroelectric scaling limits.

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Implication

This investigation shows domain wall dynamics and polarization switching in Hf0.5Zr0.5O2 nanodots, suggesting design improvements for nonvolatile memory.

Cite This Study

Ahn et al. (2025) studied this question.

synapsesocial.com/papers/68bb3d552b87ece8dc955ec3 https://doi.org/10.1002/adfm.202511839

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Implication

This investigation shows domain wall dynamics and polarization switching in Hf0.5Zr0.5O2 nanodots, suggesting design improvements for nonvolatile memory.

Scaling Effects on Ferroelectric Polarization Switching and Activation Electric Field in Epitaxial Hf0.5Zr0.5O₂ Nanodots

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Implication

Cite This Study

Scaling Effects on Ferroelectric Polarization Switching and Activation Electric Field in Epitaxial Hf0.5Zr0.5O₂ Nanodots

Key Points

Discussion

Implication

Cite This Study

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