Study the Optical and Electrical Properties of Gold Nanoparticles Deposited on Porous Silicon

Gold nanoparticles have been vast attractive attention materials due to unique of the electronic applications. In this paper, the colloidal of gold nano layer has been achieved by laser ablation at high power laser (200, 300 and 400 mJ) and then, deposited on porous silicon substrate using electrochemical etching method. The performance and characterization of Au/porous silicon samples have been examined. The results confirmed that the PSi has network like sponge shape structure with uniform distribution. The absorption spectra increase with increasing power laser and the strong peaks were found to be (542, 546 and 550 nm) at (200, 300 and 400 mJ), respectively. This is due to surface plasmon phenomena. The photoluminescence of gold nanostructures revealed the peak position was shifted to the long wavelength(redshift) with increasing power laser. Current – voltage measurements of AuNPs/PSi device exhibit that the current values increase with increasing power laser. Gold nanoparticles deposited on porous silicon can be can be achieved for optoelectronic devices. HIGHLIGHTS We report the comparison between n-type and p-type porous silicon samples We used different resistivity (0.01 - 2 Ω.cm) of silicon wafers and fixed current density (50 mA/cm2). The of gold nano layer has been achieved by laser ablation at high power laser (200, 300 and 400 mJ) and then deposited on porous silicon substrate using electrochemical etching method. The results confirmed that the PSi has network like sponge shape structure with uniform distribution. Gold nanoparticle on porous silicon can be enhanced for optoelectronic devices. The experimental characterization in this study were done by SEM, UV-Vis Spectroscopy, I-V measurements and Photoluminescence.