A Study of HiPIMS Process Characteristics in SiO2 Deposition

In this study, SiO2 thin films were sputtered from a Si target using reactive HiPIMS (high-power impulse magnetron sputtering) in an argon–oxygen process gas. In order to understand the behavior of HiPIMS, the deposition process was studied by systematically varying the sputtering parameters and monitoring the current waveforms. A decaying transient was observed at the leading edge of the pulse, caused by the L-C term of the HiPIMS generator, the cable, and the target. To investigate the periodic transient, we used, to the best of our knowledge, for the first time, a standing wave ratio meter (SWR). In order to be able to deposit films with the desired properties, the target voltage and its associated current characteristics were also investigated. The formation of a distinct step-like shape in the current–voltage characteristics is observed during reactive sputtering. A simple physical model was used to determine the position and length of the plateau. The appearance of hysteresis, which is typical of reactive sputtering, was also observed. These findings may help us to better understand the mechanism of reactive HiPIMS deposition of SiO2.