Fabrication and analysis of rare-earth (RE)-doped ZnO thin films, highlighting optical and morphological properties.
In this study, we report the fabrication and multi-technique characterization of pure and rare-earth (RE)-doped ZnO thin films using nanostructured microclusters synthesized via electrospinning followed by calcination. Lanthanum (La), erbium (Er), and samarium (Sm) were each incorporated at five concentrations (0.1–5 at.%) into ZnO, and the resulting powders were drop-cast as thin films on glass substrates. This approach enables the transfer of pre-engineered nanoscale morphologies into the final thin-film architecture. The morphological analysis by scanning electron microscopy (SEM) revealed a predominance of spherical nanoparticles and nanorods, with distinct variations in size and aspect ratio depending on dopant type and concentration. X-ray diffraction (XRD) and Rietveld analysis confirmed the wurtzite ZnO structure with increasing evidence of secondary phase formation at high dopant levels (e.g., Er2O3, Sm2O3, and La(OH)3). Raman spectroscopy showed peak shifts, broadening, and defect-related vibrational modes induced by RE incorporation, in agreement with the lattice strain and crystallinity variations observed in XRD. Elemental mapping (EDX) confirmed uniform dopant distribution. Optical transmittance exceeded 70% for all films, with Tauc analysis revealing slight bandgap narrowing (Eg = 2.93–2.97 eV) compared to pure ZnO. This study demonstrates that rare-earth doping via electrospun nanocluster precursors is a viable route to engineer ZnO thin films with tunable structural and optical properties. Despite current limitations in film-substrate adhesion, the method offers a promising pathway for future transparent optoelectronic, sensing, or UV detection applications, where further interface engineering could unlock their full potential.
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Manica et al. (2025) studied this question.
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