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Abstract This study investigated the characteristics of Zr-doped ZnO thin films with varying Zr doping concentrations. X-ray diffraction (XRD) analysis confirmed the presence of the ZnO hexagonal phase without any additional phases detected. The crystallite size was determined using Scherrer’s equation and Halder-Wagner equation, revealing distinct trends as the Zr content increased. The impact of Zr doping concentration on structural properties such as lattice parameters was also explored. Field emission scanning electron microscopy (FE-SEM) images indicated agglomeration, with a peak value observed at Zr-5 wt% of 175 nm that decreased at higher Zr contents. Optical properties exhibited minor variations with increasing Zr content, with the maximum band gap recorded at 3.28 eV for Zr-7 wt% and Zr-10 wt% films. Utilizing the Spitzer-Fan model, the high-frequency dielectric constant peaked at 14.26 for Zr-7 wt% films. Optical mobility displayed fluctuations with rising Zr content. Direct current (DC) conductivity results unveiled two donor levels in the deposited films, showcasing minimum activation energies of 0.23 and 0.165 eV for high and low-temperature ranges in the Zr-3 wt% film. Furthermore, the response to UV light illumination at a wavelength of 365 nm was examined, revealing notable changes in rise and decay times with varying Zr content.
Alasmari et al. (Mon,) studied this question.