Observational analysis characterizes optical dipole and electron spins in silicon vacancy centers, suggesting implications for quantum technologies.
Silicon vacancy centers (SiV) in diamond have emerged as a promising quantum technologies platform. We use highly strained SiV to characterize and control its optical dipole, electron and closeby nuclear spins at liquid helium temperature.
No takes yet. Share an insight, caveat, or question.
Klotz et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: