Silicon Vacancy Spin States Dressed by Surface Acoustic Waves with Large Rabi Frequencies

Q: What type of study is this?

This is a Experimental Study study.

Eliza Cornell; Zhujing Xu; Benjamin Pingault; Hana Warner; Michael Haas; Marko Lončar

doi:10.1364/cleo_si.2025.ss114_3

January 1, 2025

Silicon Vacancy Spin States Dressed by Surface Acoustic Waves with Large Rabi Frequencies

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Key Points

The study reveals the ability to coherently drive silicon vacancy spin states with large Rabi frequencies, enhancing quantum control.
High Rabi rates allow for effective probing of dressed states, maximizing the interplay between spin and strain in the silicon vacancy.
Utilizing surface acoustic waves, this method significantly boosts the manipulation of quantum states in diamond-based systems.
The findings highlight the potential for improved quantum technologies, reinforcing the role of silicon vacancy centers in future applications.

Implication

This analysis demonstrates coherent driving of silicon vacancy spin states at record-high Rabi frequencies, suggesting potential for advanced quantum applications.

Abstract

We exploit the large spin-strain coupling of the silicon vacancy center in diamond to coherently drive its spin at record-high Rabi rates. We then probe and coherently drive the dressed states defined by this large field.

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Cite This Study

Cornell et al. (2025) studied this question.

synapsesocial.com/papers/68d463f131b076d99fa63789 https://doi.org/10.1364/cleo_si.2025.ss114_3

View Full Paper

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Silicon Vacancy Spin States Dressed by Surface Acoustic Waves with Large Rabi Frequencies

Key Points

Implication

Abstract

Discussion

Cite This Study

Silicon Vacancy Spin States Dressed by Surface Acoustic Waves with Large Rabi Frequencies

Key Points

Implication

Abstract

Discussion

Cite This Study

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