Numerical Investigation of All Inorganic Lead‐Free Perovskite Based Cs₂SnI₆/p‐Si Heterojunction Solar Cell

Numerical study of Cs 2 SnI 6 /p‐c‐Si solar cell is performed to investigate the potential of Cs 2 SnI 6 lead‐free perovskite with p‐c‐Si in heterojunction configuration through SCAPS‐1D. The initial investigation emphasizes the optimization of thickness and doping concentration of the incorporated layers in Cs 2 SnI 6 /p‐c‐Si solar cell considering its optimum performance parameters. The optimized thickness of 175 μm and 10 nm for Cs 2 SnI 6 and p‐c‐Si layer are estimated, respectively. Also, the optimized doping concentrations of 4.5 × 10 17 and 1.7 × 10 18 cm −3 are estimated, respectively. Furthermore, the influence of various front‐ and back metal contacts apart from flatband ohmic contacts are analyzed considering optimum carrier collection. Al, Ag, and Cu present optimal options as front metal contacts, while Au and Pt are suitable for back metal contacts. The work function values of front‐ and back metal contacts leads to the minimal potential barrier at the metal/semiconductor interface. Using optimized solar cell with Al/Cs 2 SnI 6 /p‐c‐Si/Au configuration, an optimum PCE of 25.90% is achieved. In addition, the impact of Cs 2 SnI 6 /p‐c‐Si interface defects is also analyzed, and it is observed that when interfacial defect density is varied from 1 × 10 10 to 1 × 10 18 cm −3 then PCE decreases from 25.90% to 2.29%. The present investigation may contribute into attaining high efficiency of perovskite solar cells.