Dinuclear aluminum complex as an active material for RRAM switching devices

Vivek Sharma; Anupam Chetia; Moumita Majumder; Prem Lama; Satyajit Sahu; Ramesh K. Metre

doi:10.1039/d5dt01524c

January 1, 2025Dalton Transactions

Dinuclear aluminum complex as an active material for RRAM switching devices

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Key Points

The dinuclear aluminum complex exhibited exceptional resistive switching characteristics in devices.
Devices fabricated using Complex 1 showed promising performance metrics, suggesting effective resistive switching.
Synthesis and structural characterization were conducted for the dinuclear aluminum complex with a redox-active ligand.
Findings indicate that the complex can be an effective active material for future RRAM technologies.

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Implication

Synthesis of a dinuclear aluminum complex shows excellent resistive switching in RRAM devices, indicating its potential as an active material.

Abstract

We report the synthesis and structural characterization of dinuclear aluminum complex 1, containing redox-active bis-catecholaldimine ligand (LH4). The fabricated RRAM devices using Complex 1 displayed excellent resistive switching characteristics.

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Sharma et al. (2025) studied this question.

synapsesocial.com/papers/68c1a40254b1d3bfb60de314 https://doi.org/10.1039/d5dt01524c

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Dinuclear aluminum complex as an active material for RRAM switching devices

Key Points

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Implication

Abstract

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Dinuclear aluminum complex as an active material for RRAM switching devices

Key Points

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Implication

Abstract

Discussion

Cite This Study

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