Solution-processed Forming-free ALPO - RRAM based Artificial Synaptic Device with 3 orders of Conductance - Modulation

In this work, we propose a novel p-Si/ITO/ALPO/Al structure applicable as RRAM. The solution-processed resistive switching layer of ALPO incorporated in single-stack RRAM exhibited bi-polar resistive switching with no forming step required. The devices have exhibited endurance upto 2 × 10⁴ cycles, retention upto 10 6 s, memory-window >10 3 with current ranges typically < 200 μ A and a fast-switching speed of 50 ns. The characteristics are stable across multiple devices with also applicability to Neuromorphic Computing as Artificial Synapse. The conductance-modulation is achieved upto 3 orders which could facilitate efficient analog computing.