This study demonstrates the impact of Sb doping and coating layers on the optical properties of SnO2 films, suggesting improved performance for electronic applications.
This study investigates the optical and electrical properties of antimony (Sb)-doped tin oxide (SnO2), commonly referred to as ATO, transparent conducting thin films synthesized via a wet chemical route. The films were fabricated using a sol-gel method combined with spin-coating. The effects of Sb doping concentrations (1, 3, and 5 mol%) and the number of coating layers (5 and 10) on the films' properties were systematically examined. ATO films were deposited onto glass substrates at a constant spin speed of 2000 rpm, followed by calcination at 600 °C for 2 hours. X-ray diffraction (XRD) analysis confirmed the formation of a tetragonal SnO2 structure with no secondary phases. Optical measurements revealed high transparency in the visible range, with transmittance values between 60% and 80%. The lowest resistivity of 0.16 Ω·m was achieved with 5 mol% Sb and 10 coating layers, which also corresponded to the highest carrier concentration of 2 × 10^9 cm^-3, as determined by Hall effect measurements. These results demonstrate that optimized ATO films possess desirable properties for electronic and optoelectronic device applications.
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Kansaard et al. (2025) studied this question.
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