Research demonstrates the pivotal role of tensile strain on ferroelectricity in 2D Bi2O2Se, highlighting its application in nonvolatile memory devices.
Bi2O2Se has emerged as a promising channel material for the development of electronic devices. Efforts have been directed toward exploring ferroelectricity in 2D Bi2O2Se to harness its diverse functionalities. In this study, the epitaxial growth of 2D Bi2O2Se is engineered to achieve lattice strain at varying levels on different substrates. Atomic displacements and polarization directions under various strain conditions are observed by using scanning transmission electron microscopy (STEM), revealing that tensile strain plays a pivotal role in inducing spontaneous polarization. Additionally, second-harmonic generation (SHG) and piezoresponse force microscopy (PFM) are employed to confirm the non-centrosymmetric structure and the presence of ferroelectricity under tensile strain. The potential application of in-plane 2D Bi2O2Se-based ferroelectric tunnel junctions (FTJs) in nonvolatile memory devices is further demonstrated, with switching ratios reaching up to 105 at room temperature. These findings underscore the significant potential of 2D Bi2O2Se for nonvolatile ferroelectric memory applications.
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Li et al. (2025) studied this question.
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