Recent Advances in Chemical Vapor Deposition of Bi ₂ O ₂ Se and Its Applications in Energy‐Efficient Electronics

Two‐dimensional (2D) materials have emerged as promising candidates for next‐generation electronic and optoelectronic devices owing to their atomically thin nature and inherent immunity to short‐channel effects. However, the integration of high‐quality gate dielectrics has remained a major challenge for most 2D semiconductors, primarily because of their inert, dangling‐bond‐free surfaces, and the absence of stable native oxides. By contrast, bismuth oxyselenide (Bi 2 O 2 Se) combines high carrier mobility with the ability to form a thermodynamically stable native oxide possessing a high dielectric constant ( κ ). These properties enable the realization of low‐defect, high‐ κ gate stacks, and have led to remarkable progress in the fabrication of Bi 2 O 2 Se‐based field‐effect transistors (FETs). This review highlights recent advancements in the synthesis of Bi 2 O 2 Se, with a particular focus on chemical vapor deposition (CVD) as a scalable and industry‐compatible growth method. This article also highlights the various Bi 2 O 2 Se growth modes, such as in‐plane, inclined, and vertical orientations. Additionally, the article discusses the evolution of Bi 2 O 2 Se FET architectures from planar to fin FET (FinFET)and gate‐all‐around (GAA) configurations. Recent discoveries of ferroelectricity in Bi 2 O 2 Se are also introduced for future energy‐efficient electronics, enabling logic‐in‐memory and neuromorphic computing applications through ferroelectric‐semiconductor FETs (FeS‐FETs). Finally, the opportunities and perspectives associated with the incorporation of Bi 2 O 2 Se into future low‐power and high‐density logic applications are discussed.