Use of injection-thermal treatment to lower defectiveness of dielectric films of MIS structures

The paper proposes to implement the injection-thermal treatment of MIS structures by step-by-step increasing of density of high-field injection current up to bounded Jb value. At this density, there are no considerable degradation of the gate dielectric and its interface with semiconductor. Density of charge, injected into the dielectric under the injection-thermal treatment, should provide revealing of samples with the external defects. The injection-thermal treatment results in a high reduction of the external defects in the dielectric film of MIS structures. Besides, the treatment gives a capability to exclude the most part of samples having low charge injected until the breakdown. We demonstrate that after the injection-thermal treatment, the MIS structure reliability is mostly caused by the internal defects of the dielectric film what greatly increases reliability rates of MIS devices.