Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 12, 2025Applied Physics Letters

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

MDMaksym DubPSPavlo SaiYIYurii Ivonyak

Discussion

Loading...

Member takes

Overview

Study reveals current influences plasmon resonance frequency in AlGaN/GaN heterostructures, suggesting design improvements for plasmonic devices.

Key Points

  • A redshift of plasmon resonance frequencies occurs with increasing lateral current, indicating significant changes in behavior.
  • The major factors influencing the frequency shift are the electron concentration profile and Joule heating impacting electronic behavior.
  • Plasmonic crystals based on two-dimensional electron gas were analyzed under varying bias conditions for better performance.
  • These findings may drive advancements in plasmonic resonance-based filters, detectors, and emitters under voltage bias.

Cite This Study

Dub et al. (2025) studied this question.

synapsesocial.com/papers/68d44a4731b076d99fa53bc9https://doi.org/10.1063/5.0285068
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation2024 · 2 citations
  2. 2THz properties of grating-gate plasmonic crystals2023 · 6 citations
  3. 3Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination2023 · 6 citations
  4. 4Electrical Tuning of Terahertz Plasmonic Crystal Phases2023 · 32 citations
  5. 5High-frequency conductivity and temperature dependence of electron effective mass in AlGaN/GaN heterostructures2022 · 17 citations