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October 20, 2025Open Access

Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals

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Authors

PSPavlo SaiVKV. V. KorotyeyevDBDmytro B. But

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Overview

Observation of enhanced THz nonlinearity in 2DEG at AlGaN/GaN interface, suggesting potential for photonics applications.

Key Points

  • Nonlinear effects demonstrate relative transparency of 45% at specific pump fluences, showcasing THz modulation capabilities.
  • Ultrafast relaxation times of 15-20 ps highlight rapid dynamics in plasmonic interactions under resonant conditions.
  • The study employs a high-electric-field THz pump-probe technique to investigate plasmon oscillations in grating-gate crystals.
  • Results indicate that conventional semiconductors like AlGaN/GaN can offer strong nonlinear THz responses, vital for ultrafast applications.

Cite This Study

Sai et al. (2025) studied this question.

synapsesocial.com/papers/68f5fcce8d54a28a75cf1a69https://doi.org/10.48550/arxiv.2503.02562
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation2024 · 2 citations
  2. 2Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals—Experimental Validation of Analytical Approach2024 · 5 citations
  3. 3Enhancement of AlGaN/GaN Grating-Gate Terahertz Plasmonic Crystal Functionality Using Graphene2026
  4. 4Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals2024 · 8 citations
  5. 5Effect of current on terahertz plasmons in AlGaN/GaN heterostructures2025