Two-Dimensional Materials for Next-Generation Microelectronic Devices: A Review of Synthesis, Integration, and Performance

This review focuses on the basic properties and research progress of two-dimensional materials such as boron nitride (BN), black phosphorus and MXenes. It highlights the technical principles of material synthesis methods such as mechanical exfoliation, chemical vapour deposition (CVD), molecular beam epitaxy (MBE) and liquid phase exfoliation, and discusses the latest breakthroughs in achieving large-area, wafer-level preparation. It also delves into dry transfer, in situ growth, van der Waals heterointegration and three-dimensional stacking as device integration strategies, and provides a comprehensive analysis of the performance and optimisation paths of field-effect transistors, RF devices, flexible electronics and novel storage devices based on two-dimensional materials. Additionally, it summarises the key challenges currently faced in terms of material quality, contact resistance, interface control and process compatibility, and explores their potential applications in heterointegration, artificial intelligence-assisted design and frontier computing. This review aims to provide a systematic reference for the in-depth study and industrialisation of two-dimensional materials in the field of microelectronics.