Advancing III-Phosphide Red Light-emitting Diode Performance Through Ternary and Graded Ternary Electron Blocking Layer

Gallium Indium Phosphide (GaInP)/Aluminum Gallium Indium Phosphide (AlGaInP) red-emitting active region has been numerically employed and investigated in III-V light-emitting diodes (LEDs) in this work. We have employed ternary Aluminum Gallium Phosphide (AlGaP) electron blocking layer (EBL) and graded AlGaP EBL (or GEBL) separately in the red-emitting LED. According to the simulation results, improvements in internal quantum efficiency (IQE), radiative recombination rate ( R rad ), and carrier concentrations have been observed. Up to 9% decrease in efficiency droop is observed in red-emitting LEDs with ternary EBLs. Good carrier confinement has resulted in high R rad and, thus, increased optical output. The proposed EBLs may, thus, be adopted due to their high optical output in red-emitting LEDs, particularly for high current applications.