Revolutionizing Breast Cancer Diagnosis: Harnessing Heterojunction Vertical Tunnel FET with Magnesium Silicide

This work presents the sensitivity analysis of tumorigenic (MCF-7, T47D, Hs578T, and MDA-MB-231) and non-tumorigenic (MCF-10A) breast cells biomarkers by harnessing the highly sensitive region of Magnesium Silicide (Mg2Si) based vertical tunnel field effect transistor (Mg2Si-VTFET sensor). The sensitivity and sensing capabilities of the biomarkers are determined by a comprehensive analysis of electrical behavior. The surface potential, energy band diagram, BTBT rate, drive current, and transconductance have been considered as a sensing metric. The sensitivities are evaluated in terms of ON-state current, ION/IOFF, transconductance, and SS. Furthermore, the impact of steric hindrance during immobilization of the biomarker are also taken care of. The optimization of the proposed sensor is carried out in terms of cavity thickness. The proposed Mg2Si-VTFET sensor demonstrates substantial enhancement in sensitivity, moreover, CMOS compatibility makes it a suitable candidature for the label free detection of cancerous and non-cancerous breast biomarker detection.