Electronic and magnetic characteristics of Vanadium doped single-walled silicon carbide nanotubes: DFT study

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Vanadium doping in silicon carbide nanotubes leads to a significant change in magnetic properties.
The electronic band gaps for majority and minority spins are approximately 1.4 eV and 0.6 eV respectively.
Density functional theory computations indicate that the ferromagnetic phase is more stable than other phases.
Magnetization is primarily due to the 3d and 2p orbitals of the vanadium dopant and carbon atoms.

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DFT analysis reveals enhanced magnetization and electronic features in vanadium-doped silicon carbide nanotubes, suggesting novel applications.

Rzayeva et al. (2025) studied this question.

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DFT analysis reveals enhanced magnetization and electronic features in vanadium-doped silicon carbide nanotubes, suggesting novel applications.