Unveiling Strain and Charge Transfer Doping Effects in MoS₂/Ti₃C₂Tx Heterostructure by Raman and Photoluminescence Analysis

The modulation of optoelectronic properties in 2D materials via strain and charge doping holds significant promise for diverse applications. Here, a spectroscopic study on the heterostructure of MoS 2 /Ti 3 C 2 T x MXene is presented. The Raman study shows significant changes in frequencies and line widths of MoS 2 /Ti 3 C 2 T x heterostructure compared to bare MoS 2 . Utilizing 2D Raman correlation analysis between the Raman frequency of MoS 2 for heterostructure, the induced strain and charge doping effects in MoS 2 are elucidated. Additionally, photoluminescence (PL) investigation reveals not only a significant reduction in the PL intensity of MoS 2 but also a blueshift in the PL peak, which is attributed to the n‐type doping and inherent tensile strain generated within the heterostructure. The PL study also suggests that MXene regulates carrier density in MoS 2 by facilitating the transition from neutral exciton to trion formation. These findings provide the opportunity to control the optoelectronic properties of MoS 2 and propose the development of a novel heterostructure that could broaden MXene applications across various fields.