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September 17, 2025Osmaniye Korkut Ata Üniversitesi Fen Bilimleri Enstitüsü DergisiOpen Access

Fabrication and Characterization of n-In2S3/p-Si Based Heterojunction Photodetectors

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Authors

EAEsra Aslan

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Overview

This research shows high photosensitivity in custom-made In2S3/p-Si photodetectors, highlighting material compatibility. Additionally, it indicates that bandgap variations alter device performance.

Key Points

  • The photodetectors exhibited a maximum photosensitivity of 3396 under 5mW/cm2 visible light.
  • X-ray diffraction confirmed that all In2S3 films crystallize in a tetragonal structure.
  • Adjusting the S/In ratio resulted in a reduced dark current of 3.7×10-10 A, enhancing specific detectivity.
  • The In2S3 semiconductor proved highly compatible for forming pn junction structures with p-type silicon.

Cite This Study

Esra Aslan (2025) studied this question.

synapsesocial.com/papers/68d45e4431b076d99fa5e384https://doi.org/10.47495/okufbed.1621471
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