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November 1, 2025Journal of Materials Science Materials in ElectronicsOpen Access

Crystal growth and simulation of In0.1Al0.9N/p-Si photodetector devices

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Authors

SGSara GadMFMarwa fathyMNMohamed A. Nawwar

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Overview

Experimental analysis reveals photodetector properties in In0.1Al0.9N on p-Si, suggesting strong potential for optical applications.

Key Points

  • Photodetector performance was analyzed with both X-ray photoelectron spectroscopy and UV–Vis spectroscopy, ensuring comprehensive characterization.
  • The study calculated dislocation density values and crystallite sizes using crystal growth methodologies and X-ray diffraction techniques.
  • Assessment included photoluminescence measurements that explored optical transitions relevant to device functionality.
  • The successful simulation compared experimental data with modeling via COMSOL Multiphysics, highlighting device efficiency.

Cite This Study

Gad et al. (2025) studied this question.

synapsesocial.com/papers/69254f8ec0ce034ddc359961https://doi.org/10.1007/s10854-025-15966-7
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