Controlled Red and Red–Green–Blue Emissions via Changing Structural and Growth Parameters for Bulk‐InGaN Ordered Nanocolumn Arrays on Si(111) Substrate

Using nanotemplate selective‐area growth methods, InGaN/GaN nanocolumn arrays with bulk‐InGaN active layers are fabricated on AlN/Si(111) substrates by varying the nanocolumn period ( L = 200–400 nm) and InGaN growth time ( t InGaN = 5–20 min). For t InGaN = 12 and 20 min, the photoluminescence emission peak wavelength ( λ ) increases with L . Red emission is observed over a wide range of L (220–300 nm) at t InGaN = 12 min, and the emission color shifts from green to red at t InGaN = 20 min as L increases from 200 to 320 nm. In contrast, for t InGaN = 5 and 8 min, λ shifts toward shorter wavelengths with increasing L . Specifically, at t InGaN = 8 min, three distinct emission regions—red, green, and blue—are achieved within the bulk InGaN, with the emission switching from red to green to blue as L increases, where high‐purity red ( λ = 622 nm), green (544 nm), and blue (477 nm) emissions are obtained for L = 200, 300, and 400 nm, respectively. Notably, red–green–blue‐emitting nanocolumn arrays are achieved in a single‐growth process, with red emission realized even in thin nanocolumns where the nanocrystalline effect is pronounced.