Interface effects of ideal electrodes on conducting filaments formation in memristive thin films using phase field

Phase-field modeling has emerged as a powerful tool for simulating the evolution of conductive filaments (CFs) and hysteresis effects in memristors. However, an electrode's role and influence on CF development and electrical properties remain subjects of ongoing investigation. This study explores how incorporating ideal electrodes, modeled as highly conductive buffer regions, affects phase-field simulations compared to directly applied boundary conditions (BCs) on a memristor. By acting as an intermediary between the BCs and the memristor, the electrode significantly modifies the spatial distribution of current density at the interfaces, leading to distinct variations in overall device behavior. These results highlight the non-trivial impact of electrode effects and their necessity for realistic memristor models. A deeper understanding of electrode-memristor interactions could improve the accuracy of computational predictions and inform the design of future memory and neuromorphic computing technologies.