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September 19, 2025

Developing spin-transfer torque (STT)-resistant stochastic MTJs for complementary metal-oxide-semiconductor (CMOS)-integrated probabilistic bits

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Authors

JDJohn DanielXZXuejian ZhangZCZhihong Chen

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Overview

Experimental results reveal that STT effects impair stochastic MTJs, suggesting engineering solutions for CMOS integration.

Key Points

  • Developed a novel approach to create STT-resistant stochastic MTJs for enhanced functionality.
  • Experimental findings demonstrated compromised performance of sMTJs due to STT effects, impacting true random number generation.
  • Engineered oxide layers in MTJs are presented as a solution to improve stability and performance of stochastic devices.
  • Achieved successful monolithic integration of stochastic MTJs with CMOS technology, enabling on-chip probabilistic bit cores.

Cite This Study

Daniel et al. (2025) studied this question.

synapsesocial.com/papers/68d464f131b076d99fa6429bhttps://doi.org/10.1117/12.3065371
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