Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 31, 2024Open Access

Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

View Full Paper
Ask AI
Bookmark
Share

Authors

RORikuto OtaKKK. KobayashiKHKeisuke Hayakawa

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ota et al. (2024) studied this question.

synapsesocial.com/papers/68e6785bb6db6435876029b7https://doi.org/10.1063/5.0219606
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Double-free-layer stochastic magnetic tunnel junctions with synthetic antiferromagnets2024 · 5 citations
  2. 2Spintronics based random access memory: a review2017 · 1,155 citations
  3. 3Experimental evaluation of simulated quantum annealing with MTJ-augmented p-bits2022 · 34 citations
  4. 4Stochastic Switching in a Magnetic-Tunnel-Junction Neuron and a Bias-Dependent Néel-Arrhenius Model2022 · 17 citations
  5. 5Current control of time-averaged magnetization in superparamagnetic tunnel junctions2017 · 40 citations