Thermal boundary resistance measurement of GaN/Al2O3 interfaces based on heat source thermometry separation integrated chip

The influence of interfacial thermal boundary resistance (TBR) on the thermal performance of heterojunction devices is becoming increasingly significant, making TBR measurements a key area of interest, not only for the advancement of next-generation semiconductor devices but also for the development of precise physical measurements. In this study, we optimized the design of an integrated test chip with heat source temperature measurement separation to have higher temperature sensitivity characteristics. Using this chip, TBR was measured at the gallium nitride/Al2O3 interface. The measurement results are in good agreement with the theoretical and experimental values reported in the literature with the similar magnitude, validating the reliability of the proposed method. This research method has advantages in measuring the TBR of low thermal conductivity substrates and high optical transparency materials, providing valuable insights for thermal management and precise characterization of advanced semiconductor heterojunctions.